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SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBQR0230L-HF
Io = 200 mA VR = 30 Volts
(RoHS Device)
Features
Halogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
0402(1005)
0.041(1.05) 0.037(0.95)
0.026(0.65) 0.022(0.55)
Mechanical data
Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BA Mounting position: Any. Weight: 0.001 gram(approx.).
0.020(0.50) Typ. 0.012(0.30) Typ.
0.022(0.55) 0.018(0.45)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25 C unless otherwise noted)
O
Parameter
Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
VRRM VR IO 35 30 200 1 125 -40 +125 +125 V V mA A mW
O
8.3ms single half sine-wave superimposed on rate load(JEDEC method)
IFSM PD TSTG Tj
C C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
O
Parameter
Forward voltage Reverse current IF = 200 mA VR = 10 V
Conditions
Symbol Min Typ Max Unit
VF IR 0.5 30 V uA
REV:C
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Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBQR0230L-HF)
Fig. 1 - Forward characteristics
1000 1m
Fig. 2 - Reverse characteristics
100
Reverse current ( A )
Forward current (mA )
100u
75 C
O
10u
25 C
O
10
C
1u
5 12
O
C
C
O
25
1
75
O
-25
O
C
100n
-25 C
O
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
10n 0 5 10 15 20 25 30
Forward voltage (V)
Reverse voltage (V)
Fig.3 - Capacitance between terminals characteristics
Capacitance between terminals (PF)
100
Fig.4 - Current derating curve
Average forward current(%)
f = 1 MHz Ta = 25 C
100
80
10
60
40
20
1 0 5 10 15 20 25 30
0 0 25 50 75 100
O
125
150
Reverse voltage (V)
Ambient temperature ( C)
Fig. 5 - VF Dispersion map
450
Ta=25 C IF=200mA n=30pcs
O
Fig. 6 - IR Dispersion map
50 45
Ta=25 C VR=10V n=30pcs
O
Fig. 7 - CT Dispersion map
30 29
Ta=25 C F=1MHz VR=0V n=10pcs
O
35 30 25 20 15 10 5
AVG:4.1816uA
Capacitance between terminals(pF)
Forward voltage (mV)
Reverse current (uA)
440
40
28 27 26 25 24 23 22 21 20
AVG:22.8pF
430
420
410
AVG:421.28mV
400
0
REV:C
QW-G1096
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
P0 P1 d Index hole E T
F B
Polarity
W C
P
A
12 0
o
D2
D1 D
W1
Trailer ....... .......
10 pitches (min)
Device ....... ....... ....... .......
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
0.75 0.10
0.026 0.004
B
1.15 0.10
0.045 0.004
C
0.60 0.10
0.024 0.004
d
1.55 0.10
0.061 0.004
D
178 1
7.008 0.04
D1
60.0 MIN.
2.362 MIN.
D2
13.0 0.20
0.512 0.008
QR/0402
(mm) (inch)
SYMBOL
E
1.75 0.10
0.069 0.004
F
3.50 0.05
0.138 0.002
P
4.00 0.10
0.157 0.004
P0
4.00 0.10
0.157 0.004
P1
2.00 0.10
0.079 0.004
T
0.22 0.05
0.009 0.002
W
8.00 0.20
0.315 0.008
W1
13.5 MAX.
0.531 MAX.
QR/0402
(mm) (inch)
REV:C
QW-G1096
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Part Number CDBQR0230L-HF Marking Code
BA
BA
Suggested PAD Layout
QR/0402 SIZE (mm) A B C D E 0.750 0.500 0.700 1.250 0.250 (inch) 0.030 0.020
C D A E
0.028 0.049 0.010
B
Standard Package
Qty per Reel Case Type (Pcs) QR/0402 5000 Reel Size (inch) 7
REV:C
QW-G1096
Page 4
Comchip Technology CO., LTD.

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